Manufacturer: Samsung Model: MZ-V9P1T0BW
Product Description:
- Type: SSD
- Hard drive type: Internal
- Hard drive capacity: 1000 GB
- Memory type: M.2 2280
- Editorial: Notebook / Desktop
- HDD/SSD interface: PCIe 4.0 x4 NVMe
- NAND type: Samsung V-NAND 3bit MLC
- Cache memory: 1024 MB
- Controller: Samsung in-house
- Read speed: up to >7,450 MB/s
- Write speed: up to >6,900 MB/s
- Random Read (4KB): Up to 1,200,000 IOPS
- Random Write (4KB): Up to 1,550,000 IOPS
- Random Write (4KB): Up to 1,550,000 IOPS
- Uninterrupted operation (MTBF): 1 500 000
- Garbage collection: Auto
- Trim
- SMART
- AES encryption: 256-bit
- Shock resistance: 1500 G
- Voltage: 3.3 V ± 5
Physical characteristics: